? 2000 ixys all rights reserved 1 - 2 hiperfred tm epitaxial diode with common cathode and soft recovery pulse test: pulse width = 5 ms, duty cycle < 2.0 % pulse width = 300 s, duty cycle < 2.0 % data according to iec 60747 and per diode unless otherwise specified ixys reserves the right to change limits, test conditions and dimensions. a = anode, c = cathode to-247 ad isoplus 247 tm version a version ar a a c (tab) c a a c isolated back surface * * patent pending ac a features international standard package planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour epoxy meets ul 94v-0 version ar isolated and ul registered e153432 applications antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch dimensions see outlines.pdf d4 dsec 60-03a dsec 60-03ar v rsm v rrm type v v 300 300 dsec 60-03a 300 300 dsec 60-03ar i fav = 2x30 a v rrm = 300 v t rr = 30 ns 045 symbol conditions maximum ratings i frms 70 a i favm t c = 145c; rectangular, d = 0.5 30 a t c = 135c (ar-version) i fsm t vj = 45c; t p = 10 ms (50 hz), sine 300 a e as t vj = 25c; non-repetitive 1.2 mj i as = 3 a; l = 180 h i ar v a = 1.5 v r typ.; f = 10 khz; repetitive 0.3 a t vj -55...+175 c t vjm 175 c t stg -55...+150 c p tot t c = 25c 165 w m d * mounting torque 0.8...1.2 nm f c mounting force w ith c lip 20...120 n v isol ** 50/60 hz, rms, t = 1 minute, leads-to-tab 2500 v~ weight typical 6 g * verson a only; ** version ar only symbol conditions characteristic values typ. max. i r t vj = 25c v r = v rrm 250 a t vj = 150c v r = v rrm 1ma v f i f = 30 a; t vj = 150c 0.91 v t vj = 25c 1.25 v r thjc a-version 0.9 k/w ar-version 1.1 k/w r thch 0.25 k/w t rr i f = 1 a; -di/dt = 200 a/ s; 30 ns v r = 30 v; t vj = 25c i rm v r = 100 v; i f = 50 a; -di f /dt = 100 a/ s7a t vj = 100c
? 2000 ixys all rights reserved 2 - 2 dsec 60-03a dsec 60-03ar note: fig. 2 to fig. 6 shows typical values 200 600 1000 0 400 800 40 50 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0 40 80 120 160 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 8 10 12 14 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 0.0 0.5 1.0 1.5 0 20 40 60 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr a/ s s dsep30-03a/dsec 60-03a z thjc t vj =150c t vj =100c t vj = 25c i f = 60a i f = 30a i f = 15a t vj = 100c v r = 150v t vj = 100c v r = 150v t vj = 100c v r = 150v t vj = 100c i f = 30a v fr t fr i rm q r i f = 60a i f = 30a i f = 15a i f = 60a i f = 30a i f = 15a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt fig. 7 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.465 0.005 2 0.179 0.0003 3 0.256 0.04 045
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